UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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2022-08-12 14:59

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Conference: Bucharest University Faculty of Physics 2016 Meeting


Section: Nuclear and Elementary Particles Physics


Title:
Investigation of the 3 MV Tandetron accelerator potential for the study of the effects induced by ion implantation


Authors:
M.D. DRĂCEA(1,2), D. PANTELICA(2), G.VELIȘA(2), A.JIPA(1)


Affiliation:
(1)Faculty of Physics, Bucharest University, 405 Atomistilor St., Magurele, Ilfov, RO-077125

(2)Horia Hulubei National Institute of Physics and Nuclear Engineering, 30 Reactorului St., Magurele, Ilfov


E-mail
draceamariadiana@gmail.com


Keywords:
Si crystal,ion implantation,Rutherford Backscattering Spectrometry,amorphization,channeling


Abstract:
The modifications of the microstructure of Si single crystals implanted with high concentrations of Au ions were characterized using Rutherford backscattering spectrometry in channelling geometry (RBS/C). The RBS/C results show that low-energy Au ion implantation in Si crystals leads to the formation of a buried surface amorphous layer (with a thickness estimated to about 400 nm in the current case), as it has already been reported in the literature [1-2]. The amorphization can be ascribed to the growth of large amorphous clusters with increasing fluence of ions, following the creation of small defect clusters in the early stages of irradiation [3-4]. Additionally, in the present work, RBS/C reveals that the Au atoms are located at interstitial positions in the Si lattice due to the perfect overlapping of Au peaks recorded with the analysing beam aligned along the random or the <100>-axial directions.


References:

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[2] T. L. Alford and N. David Theodore, J. Appl. Phys. 76, (1994) 7265.

[3] M.L. Swanson, J.R. Parsons, C.W. Hoelke, Radiat. Eff. 9 (1971) 249.

[4] O.W. Holland, S.J. Pennycook, G.L. Albert, Appl. Phys. Lett.55 (1989) 2503.

[5] T.Motoka, S.Harada, M.Ishimaru, Phys.Rev. Lett.78 (1997) 2980.